US 12,148,873 B2
Light emitting device and method for manufacturing the same
Fang-Cheng Yu, Hsinchu (TW); Cheng-Chieh Chang, Hsinchu (TW); and Cheng-Yeh Tsai, Hsinchu (TW)
Assigned to AUO Corporation, Hsinchu (TW)
Filed by AUO Corporation, Hsinchu (TW)
Filed on Sep. 20, 2023, as Appl. No. 18/470,443.
Application 18/470,443 is a division of application No. 16/953,337, filed on Nov. 20, 2020, granted, now 11,804,583.
Claims priority of application No. 109119786 (TW), filed on Jun. 12, 2020.
Prior Publication US 2024/0006575 A1, Jan. 4, 2024
Int. Cl. H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/0095 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a substrate;
a first pad and a second pad located on the substrate;
a light emitting diode comprising:
a first semiconductor layer and a second semiconductor layer overlapping the first semiconductor layer;
a first electrode and a second electrode respectively connected to the first semiconductor layer and the second semiconductor layer; and
a third electrode connected to the first semiconductor layer, wherein the second semiconductor layer is located between the first electrode and the third electrode;
a first connection structure electrically connecting the first electrode to the first pad;
a second connection structure electrically connecting the second electrode to the second pad; and
a patterned adhesive layer located between the substrate and the light emitting diode and not contacting the first connection structure and the second connection structure; and
a third pad and a third connection structure, wherein the third pad is located on the substrate, wherein the third connection structure electrically connects the third electrode to the third pad, and the patterned adhesive layer is located between the second connection structure and the third connection structure.