| CPC H01L 33/60 (2013.01) [G02B 27/0172 (2013.01); H01L 33/62 (2013.01); G02B 2027/0178 (2013.01)] | 20 Claims |
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1. A micro-light emitting diode (micro-LED) device comprising:
a backplane wafer including electrical circuits fabricated thereon;
a back reflector and contact layer bonded to the backplane wafer and isolated into a plurality of electrodes by a plurality of dielectric structures;
a first sublayer of a first semiconductor material coupled to the back reflector and contact layer;
a plurality of semiconductor mesa structures on the first sublayer of the first semiconductor material, each semiconductor mesa structure of the plurality of semiconductor mesa structures including:
a second sublayer of the first semiconductor material;
an active region; and
a second semiconductor layer;
a passivation layer on sidewalls of the plurality of semiconductor mesa structures;
transparent dielectric material regions between semiconductor mesa structures of the plurality of semiconductor mesa structures; and
grating couplers in regions of the first sublayer of the first semiconductor material that are aligned with the transparent dielectric material regions,
wherein the regions of the first sublayer of the first semiconductor material are configured to guide light emitted in the active regions of the plurality of semiconductor mesa structures to the grating couplers; and
wherein the grating couplers are configured to diffract the light guided by the regions of the first sublayer of the first semiconductor material towards the transparent dielectric material regions.
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