US 12,148,863 B2
Directional light extraction from micro-LED via localization of light emitting area using mesa sidewall epitaxy
Alexander Tonkikh, Cork (IE); Salim Boutami, Seattle, WA (US); and Sophia Antonia Fox, Cork (IE)
Assigned to META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US)
Filed by Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed on Mar. 24, 2022, as Appl. No. 17/703,578.
Prior Publication US 2023/0307584 A1, Sep. 28, 2023
Int. Cl. H01L 33/44 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/58 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/44 (2013.01) [H01L 27/156 (2013.01); H01L 33/0062 (2013.01); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A micro-light emitting diode (micro-LED) device comprising:
a semiconductor mesa structure including:
at least a portion of an n-type semiconductor layer;
an active region configured to emit visible light; and
a p-type semiconductor layer;
an insulator layer including:
an undoped semiconductor passivation layer grown on sidewalls of the semiconductor mesa structure; and
a dielectric passivation layer characterized by a refractive index lower than a refractive index of the undoped semiconductor passivation layer;
a reflective metal layer deposited on the dielectric passivation layer; and
a micro-lens configured to collimate the visible light emitted by the active region,
wherein a ratio between a width of the micro-lens and a width of the active region is greater than 1.5.