US 12,148,856 B2
Solar cell, method for manufacturing the same, and photovoltaic module
Jialei Chai, Zhejiang (CN); Ding Yu, Zhejiang (CN); Shijie Zhao, Zhejiang (CN); Xiaowen Zhang, Zhejiang (CN); Wenqi Li, Zhejiang (CN); Jie Yang, Zhejiang (CN); Xinyu Zhang, Zhejiang (CN); and Hao Jin, Zhejiang (CN)
Assigned to Shanghai Jinko Green Energy Enterprise Management Co., Ltd., Shanghai (CN); and Zhejiang Jinko Solar Co., Ltd., Haining (CN)
Filed by SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD., Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN)
Filed on Oct. 2, 2021, as Appl. No. 17/492,604.
Claims priority of application No. 202111040162.4 (CN), filed on Sep. 6, 2021.
Prior Publication US 2023/0071754 A1, Mar. 9, 2023
Int. Cl. H01L 31/0216 (2014.01); H01L 21/02 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/1868 (2013.01) [H01L 21/0214 (2013.01); H01L 31/02167 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a substrate having a front surface and a rear surface opposite to each other;
a passivation stack disposed on the front surface, wherein the passivation stack includes an oxygen-containing dielectric layer, a first passivation layer, and a second passivation layer that are sequentially disposed in a direction away from the front surface, the oxygen-containing dielectric layer includes a metal oxide material, the first passivation layer includes an oxygen-containing silicon nitride material, and the second passivation layer includes a silicon oxynitride material; and
a tunneling oxide layer and a doped conductive layer that are sequentially disposed on the rear surface in a direction away from the rear surface, wherein the doped conductive layer and the substrate have doping elements of a same conductivity type;
wherein the first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer, the second passivation layer includes a third interface opposite to the second interface, a nitrogen content at the second interface is higher than that at the first interface and higher than that at the third interface, a silicon content at the second interface is higher than that at the first interface and higher than that at the third interface, and an oxygen content at the second interface is lower than that at the first interface and lower than that at the third interface;
wherein, in the direction away from the front surface, a nitrogen content and a silicon content in the first passivation layer increase at first and then decrease, a nitrogen content and a silicon content in the second passivation layer decrease, an oxygen content in the first passivation layer decreases at first and then increases, and an oxygen content in the second passivation layer increases; and
wherein the first passivation layer has a higher refractive index than the oxygen-containing dielectric layer, and than the second passivation layer, a thickness of the oxygen-containing dielectric layer in a direction perpendicular to the front surface is in a range of 1 nm to 15 nm, a thickness of the first passivation layer in a direction perpendicular to the front surface is in a range of 30 nm to 60 nm, and a thickness of the second passivation layer in a direction perpendicular to the front surface is in a range of 20 nm to 40 nm.