| CPC H01L 31/03921 (2013.01) [H01L 27/14643 (2013.01); H01L 27/14698 (2013.01)] | 12 Claims |
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1. A photoelectric conversion apparatus, comprising:
a semiconductor substrate having a first surface and a second surface opposite to the first surface;
a plurality of photoelectric conversion regions including an impurity of a first conductivity type and arranged at the semiconductor substrate;
a trench arranged between the plurality of photoelectric conversion regions;
a first impurity region including an impurity of a second conductivity type opposite to the first conductivity type and arranged along the first surface and a sidewall of the trench;
a second impurity region including the impurity of the second conductivity type and arranged along the first surface, the sidewall of the trench, and a bottom of the trench; and
a first film arranged at the first surface and the sidewall of the trench,
wherein a first impurity concentration of the impurity of the second conductivity type in the first impurity region is higher than a second impurity concentration of the impurity of the second conductivity type in the second impurity region and a maximum distance between the first surface and the first impurity region is smaller than a maximum distance between the first surface and a part of the second impurity region arranged along the sidewall of the trench,
wherein the maximum distance between the first surface and the first impurity region is larger than a distance between the first surface and another part of the second impurity region arranged along the first surface, and
wherein a maximum distance between the sidewall of the trench and an outer sidewall of the first impurity region is larger than a maximum distance between the sidewall of the trench and an outer sidewall of the part of the second impurity region.
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