US 12,148,847 B2
Solar cell and production method thereof, photovoltaic module
Mengchao Shen, Zhejiang (CN); Lipeng Wang, Zhejiang (CN); Zhongxiang Yang, Zhejiang (CN); Zhao Wang, Zhejiang (CN); Jie Yang, Zhejiang (CN); and Xinyu Zhang, Zhejiang (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Haining Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed by ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed on Jun. 23, 2022, as Appl. No. 17/848,369.
Claims priority of application No. 202210590274.5 (CN), filed on May 26, 2022.
Prior Publication US 2023/0387337 A1, Nov. 30, 2023
Int. Cl. H01L 31/0352 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/03529 (2013.01) [H01L 31/186 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a N-type substrate, wherein the N-type substrate has a first surface and the first surface is a textured surface having a plurality of pyramidal protrusions;
a P-type emitter formed on the first surface, wherein the P-type emitter comprises a first portion and a second portion, a top surface of the first portion comprises first pyramid structures formed on a first set of pyramidal protrusions of the plurality of pyramidal protrusions, one respective first pyramid structure of the first pyramid structures is an irregular tetrahedral structure, and at least a part of at least one inclined surface of the respective first pyramid structure is concave or convex relative to a center of the respective first pyramid structure, wherein a top surface of the second portion comprises second pyramid structures formed on a second set of pyramidal protrusions of the plurality of pyramidal protrusions, one respective second pyramid structure of the second pyramid structures is a regular tetrahedron structure, and inclined surfaces of the respective second pyramid structure are planar, and wherein in a direction perpendicular to the first surface of the N-type substrate, a junction depth of the first portion is greater than a junction depth of the second portion; and
a tunnel layer and a doped conductive layer sequentially formed over a second surface of the N-type substrate in a direction away from the N-type substrate;
wherein a crystal structure of the first portion of the P-type emitter has dislocations; and
wherein at least one first pyramid structure of the first pyramid structures comprises a substructure shaped as a sphere or a spheroid at a top of the at least one first pyramid structure.