US 12,148,846 B2
Solar cell and a manufacturing method therefor
Hua Li, Taizhou (CN); Hongbo Tong, Taizhou (CN); Hongchao Zhang, Taizhou (CN); and Jiyu Liu, Taizhou (CN)
Assigned to LONGI SOLAR TECHNOLOGY (TAIZHOU) CO., LTD., Taizhou (CN)
Appl. No. 17/622,212
Filed by LONGI SOLAR TECHNOLOGY (TAIZHOU) CO., LTD., Taizhou (CN)
PCT Filed Nov. 15, 2019, PCT No. PCT/CN2019/118909
§ 371(c)(1), (2) Date Dec. 22, 2021,
PCT Pub. No. WO2020/258683, PCT Pub. Date Dec. 30, 2020.
Claims priority of application No. 201910548291.0 (CN), filed on Jun. 24, 2019.
Prior Publication US 2022/0320355 A1, Oct. 6, 2022
Int. Cl. H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC H01L 31/022433 (2013.01) [H01L 31/1864 (2013.01); H01L 31/068 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A solar cell, comprising a silicon substrate, wherein
a plurality of fine-grids are deposited on the silicon substrate, the plurality of fine-grids are in ohmic contact with the silicon substrate;
a plurality of main-grids are disposed on the silicon substrate, the plurality of main-grids intersect and in electrically contact with the plurality of fine-grids; and
at least a part of the plurality of main-grids are formed by sintering an electrode slurry;
wherein each of the plurality of main-grids comprises a bonding pad and a connecting grid line connecting the plurality of fine-grids, wherein the bonding pad and the connecting grid line are alternately disposed, the bonding pad is formed by sintering the electrode slurry, and the connecting grid line is formed by an electrical deposition, a width of the connecting grid line is less than or equal to a width of the bonding pad; during the electrical deposition, the bonding pad is connected with a negative pole of a power supply, as a contact of a non-seed layer electroplating;
wherein each of the plurality of fine-grids comprises two or more metal layers disposed in a layer configuration, and the metal layers are deposited by different processes, each of the fine grids comprises a metal-layer configuration of any of: Ni/Ag layer, Co/Ag layer, Ni/Cu layer, Co/Cu layer, Ni/Cu/Sn layer, Co/Cu/Sn layer, Ni/Cu/Ag layer or Co/Cu/Ag layer.