US 12,148,845 B2
Photodetectors, preparation methods for photodetectors, photodetector arrays, and photodetection terminals
Kai Zang, Shenzhen (CN); Shuang Li, Shenzhen (CN); and Jieyang Jia, Shenzhen (CN)
Assigned to Shenzhen Adaps Photonics Technology Co. LTD., Shenzhen (CN)
Filed by Shenzhen Adaps Photonics Technology Co. LTD., Shenzhen (CN)
Filed on May 12, 2021, as Appl. No. 17/318,748.
Application 17/318,748 is a continuation of application No. PCT/CN2019/105775, filed on Sep. 12, 2019.
Claims priority of application No. 201811339767.1 (CN), filed on Nov. 12, 2018.
Prior Publication US 2021/0273120 A1, Sep. 2, 2021
Int. Cl. H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/0352 (2006.01); H01L 31/107 (2006.01)
CPC H01L 31/02027 (2013.01) [H01L 31/0216 (2013.01); H01L 31/0352 (2013.01); H01L 31/107 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A photodetector device comprising:
an absorption material having a top side and a bottom side;
a first deep trench structure configured adjacent to a first lateral side of the absorption material, the first deep trench structure comprising a first inner wall and a first outer wall, the first outer wall comprising a first light absorption surface of incoming photons;
a second deep trench structure configured adjacent to a second lateral side of the absorption material;
an active region on the top side of the absorption material;
a light-trapping region overlaying the active region comprising a first structure and a second structure separated by a predetermined spacing, the predetermined spacing being less than two microns and associated with a target wavelength and an absorption angle of incoming photons;
a substrate configured near the bottom side; and
a bottom reflection layer positioned between the substrate and the absorption material.