US 12,148,843 B2
Semiconductor device with treated interfacial layer on silicon germanium
Chih-Yu Chang, New Taipei (TW); Hsiang-Pi Chang, New Taipei (TW); and Zi-Wei Fang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on May 12, 2023, as Appl. No. 18/316,550.
Application 18/316,550 is a continuation of application No. 17/338,426, filed on Jun. 3, 2021, granted, now 11,688,812.
Application 17/338,426 is a continuation of application No. 16/853,602, filed on Apr. 20, 2020, granted, now 11,031,508, issued on Jun. 8, 2021.
Application 16/853,602 is a continuation of application No. 15/919,070, filed on Mar. 12, 2018, granted, now 10,629,749, issued on Apr. 21, 2020.
Claims priority of provisional application 62/593,004, filed on Nov. 30, 2017.
Prior Publication US 2023/0282753 A1, Sep. 7, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 21/26513 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/28202 (2013.01); H01L 21/28238 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a silicon germanium channel over a substrate;
a germanium-free interfacial layer over the silicon germanium channel;
a high-k dielectric layer over the germanium-free interfacial layer;
a metal gate electrode over the high-k dielectric layer; and
a high-k passivation layer interposing the high-k dielectric layer and the germanium-free interfacial layer, wherein the high-k passivation layer has a concentration gradient of silicate.