| CPC H01L 29/7869 (2013.01) [H01L 29/6675 (2013.01); H01L 29/78672 (2013.01)] | 9 Claims |
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1. A method for manufacturing a semiconductor device comprising:
forming a first insulating layer above a polycrystalline silicon semiconductor;
forming an island-shaped oxide semiconductor on the first insulating layer;
forming a second insulating layer on the oxide semiconductor;
forming a first contact hole and a second contact hole penetrating to the polycrystalline silicon semiconductor in a plurality of insulating layers including the first insulating layer and the second insulating layer;
forming a metal film on the second insulating layer;
forming a patterned resist on the metal film;
etching the metal film using the resist as a mask, and forming a gate electrode overlapping the oxide semiconductor and a source electrode and a drain electrode being in contact with the polycrystalline silicon semiconductor respectively in the first contact hole and the second contact hole;
performing ion implantation into the oxide semiconductor without removing the resist; and
removing the resist.
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