US 12,148,835 B2
Semiconductor device and method for manufacturing the same
Shunpei Yamazaki, Tokyo (JP); Hideomi Suzawa, Kanagawa (JP); Tetsuhiro Tanaka, Kanagawa (JP); Hirokazu Watanabe, Kanagawa (JP); Yuhei Sato, Kanagawa (JP); Yasumasa Yamane, Kanagawa (JP); and Daisuke Matsubayashi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Jun. 20, 2023, as Appl. No. 18/211,652.
Application 16/024,967 is a division of application No. 14/137,476, filed on Dec. 20, 2013, abandoned.
Application 18/211,652 is a continuation of application No. 17/358,295, filed on Jun. 25, 2021, granted, now 11,705,522.
Application 17/358,295 is a continuation of application No. 16/833,918, filed on Mar. 30, 2020, granted, now 11,049,974, issued on Jun. 29, 2021.
Application 16/833,918 is a continuation of application No. 16/024,967, filed on Jul. 2, 2018, granted, now 10,672,913, issued on Jun. 2, 2020.
Claims priority of application No. 2012-281801 (JP), filed on Dec. 25, 2012.
Prior Publication US 2023/0335646 A1, Oct. 19, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78618 (2013.01) [H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor including silicon in a channel formation region;
a second transistor over the first transistor, the second transistor including an oxide semiconductor film and a gate electrode over the oxide semiconductor film;
an insulating film over the second transistor;
a first wiring over the insulating film, the first wiring being electrically connected to a gate electrode of the first transistor and to the oxide semiconductor film; and
a second wiring electrically connected to the silicon,
wherein the second wiring and the oxide semiconductor film overlap with each other.