US 12,148,831 B2
Semiconductor device and a method for fabricating the same
Yu-Lien Huang, Jhubei (TW); and Meng-Chun Chang, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 6, 2022, as Appl. No. 17/833,833.
Application 16/206,827 is a division of application No. 15/485,606, filed on Apr. 12, 2017, granted, now 10,164,106, issued on Dec. 25, 2018.
Application 17/833,833 is a continuation of application No. 16/939,655, filed on Jul. 27, 2020, granted, now 11,355,638.
Application 16/939,655 is a continuation of application No. 16/206,827, filed on Nov. 30, 2018, granted, now 10,727,347, issued on Jul. 28, 2020.
Claims priority of provisional application 62/440,135, filed on Dec. 29, 2016.
Prior Publication US 2022/0302300 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/76831 (2013.01); H01L 21/76897 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/76804 (2013.01); H01L 21/823425 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first conductive layer;
a dielectric layer disposed over the first conductive layer;
a conductive contact disposed in a contact hole formed in the dielectric layer, and physically and electrically connecting the first conductive layer,
wherein the contact hole has a tapered shape, wherein the tapered shape has a lower portion and an upper portion having a greater taper angle than the lower portion; and
a liner layer provided on a part of an inner wall of the contact hole between the conductive contact and the dielectric layer,
wherein a thickness of the liner layer decreases from a bottom to a top of the liner layer, and
wherein a part of the conductive contact is in contact with the dielectric layer.