US 12,148,826 B2
Lateral diffused metal oxide semiconductor device
Zong-Han Lin, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Oct. 24, 2023, as Appl. No. 18/383,461.
Application 18/383,461 is a continuation of application No. 17/533,056, filed on Nov. 22, 2021, granted, now 11,843,049.
Claims priority of application No. 202111263331.0 (CN), filed on Oct. 26, 2021.
Prior Publication US 2024/0055515 A1, Feb. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 29/7816 (2013.01) [H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/7851 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A lateral diffused metal oxide semiconductor (LDMOS) device, comprising:
a first fin-shaped structure on a substrate;
a second fin-shaped structure adjacent to the first fin-shaped structure,
a shallow trench isolation (STI) between the first fin-shaped structure and the second fin-shaped structure;
a first gate structure on the first fin-shaped structure;
a second gate structure on the second fin-shaped structure; and
an air gap between the first gate structure and the second gate structure and directly on the STI.