| CPC H01L 29/7786 (2013.01) [H01L 21/8252 (2013.01); H01L 27/098 (2013.01); H01L 29/66462 (2013.01)] | 10 Claims |
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1. An integrated circuit structure, comprising:
at least one first transistor, comprising:
a first nitride semiconductor structure having a first polarized junction, which has a two-dimensional carrier gas of a first conductivity type;
a first gate electrode, which is provided on the first nitride semiconductor structure; and
a first source electrode and a first drain electrode, which are distributed opposite to each other on two sides of the first gate electrode, and are coupled with the two-dimensional carrier gas of the first conductivity type; and
at least one second transistor, comprising:
a second nitride semiconductor structure having a second polarized junction, which has a two-dimensional carrier gas of a second conductivity type;
a second gate electrode, which is provided on the second nitride semiconductor structure; and
a second source electrode and a second drain electrode, which are distributed opposite to each other on two sides of the second gate electrode, and are electrically coupled with the two-dimensional carrier gas of the second conductivity type, wherein
the first polarized junction and the second polarized junction have different crystal orientations,
the two-dimensional carrier gas of the first conductivity type and the two-dimensional carrier gas of the second conductivity type are of different conductivity types, and
the two-dimensional carrier gas of the first conductivity type and the two-dimensional carrier gas of the second conductivity type form a carrier channel in a direction parallel to the first polarized junction and in a direction parallel to the second polarized junction, respectively,
the first nitride semiconductor structure and the second nitride semiconductor structure are epitaxially grown on a same substrate, and
the first polarized junction and the second polarized junction each have a vertical interface.
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