US 12,148,819 B2
System and method for bi-directional trench power switches
Jiankang Bu, Austin, TX (US); Constantin Bulucea, Santa Clara, CA (US); Alireza Mojab, Austin, TX (US); Jeffrey Knapp, Caldwell, NJ (US); and Robert Daniel Brdar, Driftwood, TX (US)
Assigned to IDEAL POWER INC., Austin, TX (US)
Filed by IDEAL POWER INC., Austin, TX (US)
Filed on Dec. 14, 2023, as Appl. No. 18/539,959.
Application 18/539,959 is a division of application No. 17/884,803, filed on Aug. 10, 2022, granted, now 11,881,525.
Claims priority of provisional application 63/231,351, filed on Aug. 10, 2021.
Prior Publication US 2024/0113210 A1, Apr. 4, 2024
Int. Cl. H01L 29/747 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/747 (2013.01) [H01L 29/083 (2013.01); H01L 29/1012 (2013.01); H01L 29/66386 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, the method comprising:
doping to create an upper base region associated with a first side of a substrate of semiconductor material;
etching the first side to create an upper-CE trench, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate;
doping through the distal end of the upper-CE trench to create an upper collector-emitter region;
doping to create a lower base region associated with a second side of the substrate; and
doping to create a lower collector-emitter region associated with the second side.