US 12,148,818 B2
Power semiconductor device comprising a thyristor and a bipolar junction transistor
Tobias Wikstroem, Egliswil (CH)
Assigned to Hitachi Energy Ltd, Zürich (CH)
Appl. No. 17/913,981
Filed by Hitachi Energy Ltd, Zürich (CH)
PCT Filed Mar. 9, 2021, PCT No. PCT/EP2021/055919
§ 371(c)(1), (2) Date Sep. 23, 2022,
PCT Pub. No. WO2021/197774, PCT Pub. Date Oct. 7, 2021.
Claims priority of application No. 20167336 (EP), filed on Mar. 31, 2020.
Prior Publication US 2023/0118951 A1, Apr. 20, 2023
Int. Cl. H01L 29/74 (2006.01); H01L 29/745 (2006.01)
CPC H01L 29/7404 (2013.01) [H01L 29/7416 (2013.01); H01L 29/745 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power semiconductor device comprising:
a semiconductor wafer having a first main side and a second main side opposite to the first main side;
a thyristor structure comprising:
a first emitter layer of a first conductivity type adjacent the first main side;
a first base layer of a second conductivity type different from the first conductivity type, wherein the first emitter layer is in direct contact with the first base layer to form a first p-n junction between the first base layer and the first emitter layer;
a second base layer of the first conductivity type, wherein the first base layer is in direct contact with the second base layer to form a second p-n junction between the first base layer and the second base layer;
a second emitter layer of the second conductivity type separated from the first base layer by the second base layer, wherein the second base layer is in direct contact with the second emitter layer to form a third p-n junction between the second base layer and the second emitter layer;
a gate electrode forming an ohmic contact with the first base layer;
a first main electrode arranged on the first main side and forming an ohmic contact with the first emitter layer; and
a second main electrode arranged on the second main side and forming an ohmic contact with the second emitter layer; and
a bipolar junction transistor arranged lateral to the thyristor structure, wherein the bipolar junction transistor comprises a base electrode electrically separated from the gate electrode, a third main electrode arranged on the first main side and a fourth main electrode arranged on the second main side, wherein the first main electrode is electrically connected to the third main electrode and the second main electrode is electrically connected to the fourth main electrode;
wherein the base electrode corresponds to a base terminal of the bipolar junction transistor;
wherein the third main electrode corresponds to one of a collector terminal and an emitter terminal of the bipolar junction transistor; and
wherein the fourth main electrode corresponds to the other one of the collector terminal and the emitter terminal of the bipolar junction transistor.