US 12,148,816 B2
Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
Jean-Pierre Colinge, Blot l'Eglise (FR); Carlos H Diaz, Los Altos Hills, CA (US); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 11, 2022, as Appl. No. 17/717,799.
Application 16/570,663 is a division of application No. 15/905,978, filed on Feb. 27, 2018, granted, now 10,461,179, issued on Oct. 29, 2019.
Application 15/905,978 is a division of application No. 15/404,712, filed on Jan. 12, 2017, granted, now 9,929,257, issued on Mar. 27, 2018.
Application 15/404,712 is a division of application No. 14/656,948, filed on Mar. 13, 2015, granted, now 9,564,493, issued on Feb. 7, 2017.
Application 17/717,799 is a continuation of application No. 17/079,853, filed on Oct. 26, 2020, granted, now 11,302,804.
Application 17/079,853 is a continuation of application No. 16/570,663, filed on Sep. 13, 2019, granted, now 10,818,780, issued on Oct. 27, 2020.
Prior Publication US 2022/0238704 A1, Jul. 28, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/426 (2006.01); H01L 21/441 (2006.01); H01L 21/461 (2006.01); H01L 21/477 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8256 (2006.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01)
CPC H01L 29/66969 (2013.01) [H01L 21/02521 (2013.01); H01L 21/02573 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02598 (2013.01); H01L 21/0262 (2013.01); H01L 21/02636 (2013.01); H01L 21/02667 (2013.01); H01L 21/426 (2013.01); H01L 21/441 (2013.01); H01L 21/461 (2013.01); H01L 21/477 (2013.01); H01L 21/76224 (2013.01); H01L 21/76895 (2013.01); H01L 21/823412 (2013.01); H01L 21/823487 (2013.01); H01L 21/8256 (2013.01); H01L 21/8258 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/1207 (2013.01); H01L 27/1222 (2013.01); H01L 27/127 (2013.01); H01L 29/04 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/7827 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a channel structure over a substrate, the channel structure comprising a bismuth-containing semiconductor material, wherein the bismuth-containing semiconductor material has a monocrystalline trigonal structure;
a first source/drain contact region between the channel structure and the substrate;
a dielectric layer over the first source/drain contact region, the channel structure extending through the dielectric layer; and
a gate electrode over the dielectric layer, the gate electrode surrounding the channel structure in a plan view.