US 12,148,815 B2
Fin field effect transistor device structure
Kuo-Cheng Ching, Zhubei (TW); Kuan-Ting Pan, Taipei (TW); Shi-Ning Ju, Hsinchu (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 30, 2023, as Appl. No. 18/345,384.
Application 18/345,384 is a division of application No. 17/827,327, filed on May 27, 2022, granted, now 11,735,649.
Application 17/827,327 is a division of application No. 16/910,450, filed on Jun. 24, 2020, granted, now 11,349,016, issued on May 31, 2022.
Application 16/910,450 is a continuation of application No. 16/226,827, filed on Dec. 20, 2018, granted, now 10,700,183, issued on Jun. 30, 2022.
Claims priority of provisional application 62/747,720, filed on Oct. 19, 2018.
Prior Publication US 2023/0352569 A1, Nov. 2, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66818 (2013.01) [H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A fin field effect transistor device structure, comprising:
a first fin structure disposed in a substrate and comprising:
a base portion surrounded by an isolation structure;
a top portion exposed from the isolation structure; and
a joint portion connecting the top portion and the base portion;
a fin top layer disposed over the top portion of the first fin structure, wherein the fin top layer and the top portion of the first fin structure are made of different materials;
a first oxide layer covering the fin top layer, the first fin structure, and the isolation structure; and
a first gate structure disposed over the first oxide layer.