US 12,148,804 B2
Semiconductor device including one or more p-type semiconductors provided between an n-type semiconductor layer and an electrode
Masahiro Sugimoto, Kyoto (JP); Isao Takahashi, Kyoto (JP); Takashi Shinohe, Kyoto (JP); and Koji Amazutsumi, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP)
Appl. No. 17/259,622
Filed by FLOSFIA INC., Kyoto (JP)
PCT Filed Jul. 10, 2019, PCT No. PCT/JP2019/027376
§ 371(c)(1), (2) Date Jan. 12, 2021,
PCT Pub. No. WO2020/013242, PCT Pub. Date Jan. 16, 2020.
Claims priority of application No. 2018-132761 (JP), filed on Jul. 12, 2018.
Prior Publication US 2021/0320179 A1, Oct. 14, 2021
Int. Cl. H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/417 (2013.01) [H01L 29/24 (2013.01); H01L 29/872 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an n-type semiconductor layer;
two or more p-type semiconductors; and
an electrode, wherein
the n-type semiconductor layer includes a first oxide semiconductor as a major component,
the first oxide semiconductor contains a gallium,
the two or more p-type semiconductors are provided between the n-type semiconductor layer and the electrode,
at least a first part of the two or more p-type semiconductors is embedded in the n-type semiconductor layer,
at least a second part of the two or more p-type semiconductors is protruded in the electrode,
the two or more p-type semiconductors are in direct contact with at least a part of the n-type semiconductor layer,
the two or more p-type semiconductors contain a second oxide semiconductor and a p-type dopant, and
the p-type dopant includes one or more elements selected from Mg, Zn, Ca, H, Li, Na, K, Rb, Cs, Fr, Be, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Cd, Hg, TI, Pb, N, and P,
a distance between adjacent p-type semiconductors in the two or more p-type semiconductors is in a range of from 0.125 μm to 4 μm, and
a depth of the two or more p-type semiconductor is in a range of from 0.125 μm to 4 μm.