US 12,148,800 B2
Semiconductor device with reduced contact resistance
Sahwan Hong, Yongin-si (KR); Hanki Lee, Hwaseong-si (KR); and Jeongmin Lee, Gyeongju-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 30, 2023, as Appl. No. 18/325,335.
Application 18/325,335 is a continuation of application No. 17/370,551, filed on Jul. 8, 2021, granted, now 11,695,046.
Claims priority of application No. 10-2020-0169762 (KR), filed on Dec. 7, 2020.
Prior Publication US 2023/0299149 A1, Sep. 21, 2023
Int. Cl. H01L 29/167 (2006.01); B82Y 10/00 (2011.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/167 (2013.01) [H01L 29/0847 (2013.01); H01L 29/41775 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device comprising:
providing a substrate;
forming a source/drain region on the substrate by epitaxial growth; and
doping germanium (Ge) on an upper surface of the source/drain region to form a shallow doping region in which a concentration of germanium (Ge) gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a vertical direction that is perpendicular to the upper surface of the substrate,
wherein the doping of germanium (Ge) comprises:
performing hydrogen treatment on the upper surface of the source/drain region;
diffusing germanium (Ge) into the upper surface of the source/drain region that was hydrogen-treated to dope the germanium (Ge) onto the upper surface of the source/drain region; and
selectively removing remaining germanium (Ge) from a region other than the source/drain region.