US 12,148,781 B2
Image sensor device
Szu-Ying Chen, Toufen Township (TW); Min-Feng Kao, Chiayi (TW); Jen-Cheng Liu, Hsin-Chu (TW); Feng-Chi Hung, Chu-Bei (TW); and Dun-Nian Yaung, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 4, 2022, as Appl. No. 17/880,748.
Application 14/519,798 is a division of application No. 13/595,494, filed on Aug. 27, 2012, granted, now 8,883,544, issued on Nov. 11, 2014.
Application 17/880,748 is a continuation of application No. 16/909,024, filed on Jun. 23, 2020, granted, now 11,502,121.
Application 16/909,024 is a continuation of application No. 16/212,784, filed on Dec. 7, 2018, granted, now 10,734,428, issued on Aug. 4, 2020.
Application 16/212,784 is a continuation of application No. 15/170,200, filed on Jun. 1, 2016, granted, now 10,163,951, issued on Dec. 25, 2018.
Application 15/170,200 is a continuation of application No. 14/519,798, filed on Oct. 21, 2014, granted, now 9,406,715, issued on Aug. 2, 2016.
Claims priority of provisional application 61/642,883, filed on May 4, 2012.
Prior Publication US 2022/0375971 A1, Nov. 24, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming an integrated chip, comprising:
forming a gate stack over a front surface of a semiconductor substrate;
forming a mask layer over at least a portion of the gate stack and a portion of the front surface; and
implanting a plurality of dopants into one or more regions of the semiconductor substrate that are not covered by the mask layer to form one or more doped isolation features in the semiconductor substrate, wherein the plurality of dopants are implanted into the one or more regions of the semiconductor substrate after forming the mask layer over the gate stack.