US 12,148,780 B2
Image sensor
Haeyong Park, Yongin-si (KR); and Sungsoo Choi, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 3, 2022, as Appl. No. 17/735,605.
Claims priority of application No. 10-2021-0103290 (KR), filed on Aug. 5, 2021.
Prior Publication US 2023/0044820 A1, Feb. 9, 2023
Int. Cl. H01L 27/146 (2006.01); H10K 39/32 (2023.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14614 (2013.01); H01L 27/14641 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01); H10K 39/32 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate including a plurality of pixel regions; and
a deep device isolation pattern disposed in the substrate between the pixel regions,
wherein the pixel regions comprise:
a first pixel region and a second pixel region, which are adjacent to each other in a first direction parallel to a first surface of the substrate;
a third pixel region, which is adjacent to the first pixel region in a second direction that is parallel to the first surface of the substrate and crosses the first direction; and
a fourth pixel region, which is adjacent to the second pixel region in the second direction and is adjacent to the third pixel region in the first direction,
wherein the deep device isolation pattern comprises:
first portions, which are interposed between the first and second pixel regions and between the third and fourth pixel regions and are spaced apart from each other in the second direction; and
second portions, which are interposed between the first and third pixel regions and between the second and fourth pixel regions and are spaced apart from each other in the first direction,
wherein the first pixel region comprises a first extended active pattern, and
wherein the first extended active pattern is extended to the second pixel region in the first direction and is disposed between the first portions of the deep device isolation pattern.