| CPC H01L 27/127 (2013.01) [H01L 27/1233 (2013.01)] | 12 Claims |

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1. An array substrate, comprising:
a base substrate;
a first thin film transistor on the base substrate;
wherein the first thin film transistor comprises: a first gate electrode, a first active layer, a first source electrode, and a first drain electrode;
wherein the first active layer comprises:
at least one guide structure extending in a first direction;
a silicon-based nanowire, disposed on a side of the guide structure facing away from the base substrate; and
an extending direction of the silicon-based nanowire is same as an extending direction of the guide structure;
wherein the first active layer comprises a plurality of guide structures;
each of the plurality of guide structures extends in a first direction;
a cross section of the plurality of guide structures perpendicular to the first direction comprises a concave-convex structure;
wherein the concave-convex structure comprises a concave portion and a convex portion; and the silicon-based nanowire is located at a position corresponding to the concave portion.
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