US 12,148,766 B2
High-K dielectric materials comprising zirconium oxide utilized in display devices
Xiangxin Rui, Campbell, CA (US); Lai Zhao, Campbell, CA (US); Jrjyan Jerry Chen, Campbell, CA (US); Soo Young Choi, Fremont, CA (US); and Yujia Zhai, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 19, 2023, as Appl. No. 18/545,810.
Application 18/545,810 is a continuation of application No. 15/773,640, granted, now 11,239,258, issued on Feb. 1, 2022, previously published as PCT/US2017/041555, filed on Jul. 11, 2017.
Claims priority of provisional application 62/364,145, filed on Jul. 19, 2016.
Claims priority of provisional application 62/364,139, filed on Jul. 19, 2016.
Prior Publication US 2024/0120349 A1, Apr. 11, 2024
Int. Cl. H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/1248 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a composite film layer for display devices, comprising:
performing an atomic layer deposition (ALD) process to form a composite film layer comprising a first layer and a second layer disposed on a transparent substrate, wherein the first layer comprises an amorphous silicon doped zirconium containing layer formed on the transparent substrate and the second layer comprises a crystalline zirconium containing layer.