US 12,148,746 B2
Integrated circuit and method of manufacturing same
Chia-Wei Hsu, Hsinchu (TW); Bo-Ting Chen, Hsinchu (TW); and Jam-Wem Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/446,192.
Prior Publication US 2023/0068882 A1, Mar. 2, 2023
Int. Cl. H01L 27/02 (2006.01)
CPC H01L 27/0292 (2013.01) 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device, comprising:
a substrate comprising a first substrate segment having first functional circuitry and a second substrate segment having a first electrostatic discharge (ESD) clamp circuit;
a first connection tower that connects to an input/output pad; and
one or more first front side conductors and one or more first front side metal vias, wherein the one or more first front side conductors and one or more first front side metal vias connect the first connection tower to the first functional circuitry in the first substrate segment and to the first ESD clamp circuit in the second substrate segment,
wherein no other connection tower other than the first connection tower connects the input/output pad to the first functional circuitry in the first substrate segment and to the first ESD clamp circuit in the second substrate segment.