US 12,148,739 B2
Micro-light-emitting diode display apparatus and method of manufacturing the same
Seogwoo Hong, Yongin-si (KR); Junsik Hwang, Hwaseong-si (KR); and Kyungwook Hwang, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 16, 2023, as Appl. No. 18/234,798.
Application 18/234,798 is a continuation of application No. 17/174,934, filed on Feb. 12, 2021, granted, now 11,764,194.
Claims priority of application No. 10-2020-0113203 (KR), filed on Sep. 4, 2020.
Prior Publication US 2023/0402435 A1, Dec. 14, 2023
Int. Cl. H01L 25/075 (2006.01); H01L 27/12 (2006.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01)
CPC H01L 25/0753 (2013.01) [H01L 27/1214 (2013.01); H01L 33/50 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus comprising:
a driving circuit substrate;
a first electrode provided on the driving circuit substrate;
one or more micro-light-emitting diodes (LEDs) provided on the first electrode;
an insulating layer provided on the one or more micro-LEDs;
a via pattern provided in the insulating layer;
electrical contacts provided in the via pattern; and
a second electrode provided on the electrical contacts,
wherein the via pattern exposes a portion of the one or more micro-LEDs,
wherein each of the plurality of pixels comprises a plurality of sub-pixels,
wherein the one or more micro-LEDs are arranged in each of the plurality of sub-pixels at an irregular interval, and
wherein a thickness of each of the electrical contacts corresponds to a distance between an upper surface of the insulating layer and an upper surface of the one or more micro-LEDs.