US 12,148,733 B2
Shift control method in manufacture of semiconductor device
Chih-Wei Wu, Yilan County (TW); Ying-Ching Shih, Hsinchu (TW); and Hsien-Ju Tsou, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 19, 2021, as Appl. No. 17/530,481.
Application 17/530,481 is a division of application No. 16/572,628, filed on Sep. 17, 2019, granted, now 11,183,482.
Prior Publication US 2022/0077108 A1, Mar. 10, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01)
CPC H01L 24/96 (2013.01) [H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 22/20 (2013.01); H01L 22/26 (2013.01); H01L 23/544 (2013.01); H01L 22/12 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/95001 (2013.01); H01L 2224/95121 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A shift control method in manufacture of semiconductor device, comprising:
placing a plurality of semiconductor dies over a carrier, wherein an overlay offset is between a first target of one of the plurality of semiconductor dies and a second target of the one of the plurality of semiconductor dies, the first target and the second target are stacked upon one another, and the overlay offset is compensated when placing the one of the plurality of semiconductor dies over the carrier;
encapsulating the plurality of semiconductor dies with an insulating encapsulation over the carrier, wherein at least portions of the plurality of semiconductor dies are shifted after encapsulating; and
forming a lithographic pattern at least on the plurality of semiconductor dies, wherein forming the lithographic pattern comprises compensating for a shift in a position of the portions of the plurality of semiconductor dies.