US 12,148,732 B2
Package structure and method of fabrcating the same
Hung-Jui Kuo, Hsinchu (TW); Hui-Jung Tsai, Hsinchu (TW); Chia-Wei Wang, Hsinchu (TW); and Yu-Tzu Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/874,304.
Application 17/874,304 is a continuation of application No. 17/004,022, filed on Aug. 27, 2020, granted, now 11,450,641.
Claims priority of provisional application 62/906,732, filed on Sep. 27, 2019.
Prior Publication US 2022/0367409 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01)
CPC H01L 24/82 (2013.01) [H01L 21/4846 (2013.01); H01L 21/568 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 21/78 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03914 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/24011 (2013.01); H01L 2224/24147 (2013.01); H01L 2224/24175 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/2939 (2013.01); H01L 2224/73209 (2013.01); H01L 2224/82005 (2013.01); H01L 2224/82106 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a redistribution structure, comprising:
providing a dielectric layer;
patterning the dielectric layer to form a plurality of via openings;
forming a seed layer on the dielectric layer and filling in the plurality of via openings;
forming a patterned conductive layer on the seed layer, wherein a portion of the seed layer is exposed by the patterned conductive layer; and
removing the portion of the seed layer by using an etching solution, thereby forming a plurality of conductive lines and a plurality of vias, wherein etching solution comprises a protective agent, and the protective agent comprises amine or polyamine having multiple active sites,
wherein during the removing the portion of the seed layer, an etch rate of the patterned conductive layer is less than an etch rate of the seed layer.