US 12,148,731 B2
Method of manufacturing semiconductor device having air cavity in RDL structure
Hsih-Yang Chiu, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Apr. 7, 2022, as Appl. No. 17/715,272.
Prior Publication US 2023/0326904 A1, Oct. 12, 2023
Int. Cl. H01L 21/76 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/82 (2013.01) [H01L 2224/82002 (2013.01); H01L 2224/82101 (2013.01); H01L 2224/82106 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming an interconnection structure on a substrate;
forming a first dielectric layer on the interconnection structure;
forming a sacrificial pattern on the first dielectric layer;
forming a redistribution layer (RDL) on the first dielectric layer and the sacrificial pattern; and
removing the sacrificial pattern to form an air cavity within the RDL, wherein a thickness of the RDL is greater than a height of the air cavity.