| CPC H01L 24/14 (2013.01) [H01L 24/03 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/0657 (2013.01); H01L 24/81 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/1412 (2013.01); H01L 2224/14517 (2013.01); H01L 2224/16014 (2013.01); H01L 2224/16052 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17051 (2013.01); H01L 2224/17055 (2013.01); H01L 2224/17517 (2013.01); H01L 2224/81139 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/81815 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06575 (2013.01); H01L 2924/3511 (2013.01)] | 9 Claims |

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1. A Semiconductor package comprising a plurality of dies arranged in a stack,
wherein adjacent ones of the plurality of dies are separated by a plurality of interconnects and a plurality of die support structures,
wherein each of the plurality of die support structures includes a stand-off pillar and a stand-oil pad with a first distance between the stand-off pillar and the stand-off pad,
wherein each of the plurality of interconnects includes a conductive pillar, a conductive pad, and a bond material with a solder joint thickness between the conductive pillar and the conductive pad, and
wherein the first distance is less than the solder joint thickness,
wherein the stand-off pad of each of the plurality of die support structures extends from a first planar surface of the first semiconductor die by a greater amount than the conductive pad of each of the plurality of interconnects extends from the first planar surface, and
wherein the stand-oft pillar of each of the plurality of die support structures extends front a second planar surface of the second semiconductor die by a greater amount than the conductive pillar of each of the plurality of interconnects extends from the second planar surface.
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