| CPC H01L 24/13 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 24/05 (2013.01); H01L 25/0652 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13026 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3511 (2013.01)] | 20 Claims |

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1. A semiconductor substrate structure, comprising:
a first group of circuit structure, comprising a plurality of first wiring layers and a plurality of first conductive connectors, wherein each of the first conductive connectors comprises a conductive cap;
a second group of circuit structure, comprising a plurality of second wiring layers and a plurality of second conductive connectors, wherein the first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure, a number of the first wiring layers of the first group of circuit structure is the same as a number of the second wiring layers of the second group of circuit structure; and
a first device, wherein:
the first device is disposed on the first group of circuit structure and electrically connected to portion of the first conductive connectors; or
the first device is disposed on the second group of circuit structure and electrically connected to portion of the second conductive connectors.
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