US 12,148,722 B2
Semiconductor device with barrier layer
Ming-Hung Hsieh, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on May 18, 2022, as Appl. No. 17/747,300.
Application 17/747,300 is a division of application No. 17/234,282, filed on Apr. 19, 2021, granted, now 11,545,453.
Prior Publication US 2022/0336390 A1, Oct. 20, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 24/03 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05688 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a circuit layer positioned on the substrate;
a pad layer positioned in the circuit layer and comprising aluminum and copper;
a first barrier layer positioned on the pad layer and comprising aluminum fluoride;
a first connector positioned on the first barrier layer;
a first passivation layer positioned on the circuit layer, wherein the first barrier layer is positioned in the first passivation layer, wherein a thickness of the first passivation layer is greater than a thickness of the first barrier layer; and
a cushion layer positioned in the circuit layer and topographically aligned with the pad layer, wherein the cushion layer is at a vertical level lower than a vertical level of the pad layer.