US 12,148,714 B2
Three-dimensional memory devices and methods for forming the same
Wei Xie, Wuhan (CN); Di Wang, Wuhan (CN); Tingting Zhao, Wuhan (CN); and Wenxi Zhou, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Sep. 29, 2021, as Appl. No. 17/488,846.
Application 17/488,846 is a continuation of application No. PCT/CN2021/117882, filed on Sep. 13, 2021.
Prior Publication US 2023/0084615 A1, Mar. 16, 2023
Int. Cl. H10B 43/27 (2023.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01)
CPC H01L 23/562 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a stack structure comprising a core region and a staircase region;
a channel structure extending through the stack structure in the core region; and
a first support structure extending through the stack structure in the staircase region,
wherein the first support structure comprises a first portion extending along a first direction and a second portion protruding from the first portion along a second direction perpendicular to the first direction,
wherein the second portion of the first support structure comprises a first plurality of curved portions protruding from a first side of the first portion and a second plurality of curved portions protruding from a second side of the first portion at predetermined intervals along its length,
wherein a curvature of each of the first plurality of curved portions and the second plurality of curved portions contacts the first portion, and
wherein the first support structure is located between two blocks of the 3D memory device.