US 12,148,712 B2
Semiconductor device and method of manufacturing semiconductor device
Kazuya Ogawa, Tokyo (JP); and Tsuyoshi Osaga, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/275,165
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Nov. 20, 2018, PCT No. PCT/JP2018/042801
§ 371(c)(1), (2) Date Mar. 10, 2021,
PCT Pub. No. WO2020/105113, PCT Pub. Date May 28, 2020.
Prior Publication US 2022/0045018 A1, Feb. 10, 2022
Int. Cl. H01L 27/14 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01); H01L 29/739 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/78 (2013.01); H01L 22/32 (2013.01); H01L 22/34 (2013.01); H01L 23/585 (2013.01); H01L 29/7393 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate including an effective region including a semiconductor element and an ineffective region provided on a circumference of the effective region on a front surface of the semiconductor substrate, the semiconductor substrate including a rear surface electrode on a rear surface of the semiconductor substrate; and
inspection wiring provided in the ineffective region including a portion on and over the front surface of the semiconductor substrate so that the portion on and over the front surface surrounds an outer periphery of the effective region, wherein
the inspection wiring includes a first end portion that extends from the portion of the inspection wiring that is on and over the front surface and electrically connects to the rear surface electrode in such a manner that the first end portion of the inspection wiring is in contact with a semiconductor layer which is provided in the ineffective region on the front surface of the semiconductor substrate and electrically connected to the rear surface electrode.