| CPC H01L 23/552 (2013.01) [H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/66 (2013.01); H01Q 1/2283 (2013.01); H01L 2223/6677 (2013.01)] | 17 Claims |

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1. A semiconductor device, comprising:
a substrate having a ground plane fully embedded beneath a first surface of the substrate;
a semiconductor die;
an antenna structure;
an electromagnetic interference (EMI) shield positioned between the semiconductor die and the antenna structure, wherein the EMI shield is electrically coupled to different ends of the ground plane via different access points at the first surface of the substrate; and
an electrical connector formed on a second surface of the substrate opposite the first surface, wherein the antenna structure is electrically coupled to the electrical connector via the substrate, and wherein the electrical connector is electrically isolated from the semiconductor die.
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