US 12,148,699 B2
High aspect ratio buried power rail metallization
Sagarika Mukesh, Albany, NY (US); Devika Sarkar Grant, Amsterdam, NY (US); Fee Li Lie, Albany, NY (US); Hosadurga Shobha, Niskayuna, NY (US); Thamarai selvi Devarajan, Niskayuna, NY (US); and Aakrati Jain, Albany, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Jun. 13, 2022, as Appl. No. 17/806,570.
Prior Publication US 2023/0402378 A1, Dec. 14, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5286 (2013.01) [H01L 21/76874 (2013.01); H01L 23/5283 (2013.01); H01L 23/53252 (2013.01); H01L 23/53295 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor component, comprising:
an area of dielectric material extending below an uppermost surface of a substrate;
a trench formed so as to extend from above the uppermost surface of the substrate into the area of dielectric material;
a non-metal liner coating interior surfaces of the trench;
a metal liner coating interior surfaces of the non-metal liner; and
a power rail formed in the trench in direct contact with at least one of the metal liner or the non-metal liner such that the power rail extends into the area of dielectric material and above the uppermost surface of the substrate,
wherein a height of the metal liner is less than a height of the power rail.