US 12,148,695 B2
Fuse structure and manufacturing method thereof
Xiong Li, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Nov. 1, 2021, as Appl. No. 17/516,640.
Application 17/516,640 is a continuation of application No. PCT/CN2021/120280, filed on Sep. 24, 2021.
Claims priority of application No. 202110553275.8 (CN), filed on May 20, 2021.
Prior Publication US 2022/0375857 A1, Nov. 24, 2022
Int. Cl. H01L 23/525 (2006.01); H10B 20/25 (2023.01)
CPC H01L 23/5256 (2013.01) [H10B 20/25 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A fuse structure, comprising:
a substrate;
an active region positioned above the substrate;
a fuse gate structure surrounding a circumferential outer surface of the active region and electrically connected to a first power source; and
a control gate structure surrounding a circumferential outer surface of the fuse gate structure and electrically connected to a second power source;
wherein, a voltage of the first power source is greater than that of the second power source.