US 12,148,691 B2
Three-dimensional integrated structure and manufacturing method thereof
Yun-Feng Kao, New Taipei (TW); Chien-Hao Huang, Hsinchu (TW); Gao-Ming Wu, New Taipei (TW); and Katherine H Chiang, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 25, 2022, as Appl. No. 17/704,026.
Prior Publication US 2023/0307351 A1, Sep. 28, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/5223 (2013.01) [H01L 28/90 (2013.01); H10B 12/033 (2023.02); H10B 12/31 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional integrated structure, comprising:
a substrate having conductive features therein; and
a component array disposed over the substrate and on the conductive features, wherein the component array includes a metallic material layer and capacitor structures separated by the metallic material layer, and each of the capacitor structures includes:
a first metallic pillar;
a first dielectric sheath surrounding the first metallic pillar;
a second metallic sheath surrounding the first dielectric sheath; and
a second dielectric sleeve surrounding the second metallic sheath,
wherein the metallic material layer is filled between the capacitor structures and laterally encapsulates the capacitor structures, and the capacitor structures penetrate through the metallic material layer to reach the conductive features.
 
9. A three-dimensional integrated structure, comprising:
a bottom layer having conductive connection structures therein;
capacitor structures disposed over the bottom layer and on the conductive connection structure;
a first metallic layer filling between and laterally wrapping the capacitor structures, wherein the capacitor structures penetrate through the first metallic layer and are separated by the first metallic layer;
an insulation layer disposed on the first metallic layer and the capacitor structures; and
a second metallic layer disposed on the insulation layer,
wherein each of the capacitor structures includes:
a metallic pillar;
a dielectric sheath surrounding the metallic pillar;
a metallic sheath surrounding the dielectric sheath; and
a dielectric sleeve surrounding the metallic sheath.
 
17. A three-dimensional integrated structure, comprising:
a substrate having conductive features therein; and
a component array disposed over the substrate and on the conductive features, wherein the component array includes:
a first metallic material layer;
capacitor structures laterally wrapped by the first metallic material layer, and the capacitor structures being separated by the first metallic material layer filled there-between, wherein the capacitor structures penetrate through the metallic material layer to reach the conductive features;
an insulation layer disposed on the first metallic material layer and the capacitor structures; and
a second metallic material layer disposed on the insulation layer,
wherein each of the capacitor structures includes:
a first metallic pillar;
a first dielectric sheath surrounding the first metallic pillar;
a second metallic sheath surrounding the first dielectric sheath; and
a second dielectric sleeve surrounding the second metallic sheath.