US 12,148,689 B2
Semiconductor device with interconnectors of different density
Liang-Pin Chou, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Dec. 23, 2021, as Appl. No. 17/560,562.
Prior Publication US 2023/0207438 A1, Jun. 29, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01)
CPC H01L 23/49838 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05563 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/16055 (2013.01); H01L 2224/16057 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/73204 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a package structure comprising a first side and a second side opposite to the first side;
an interposer structure positioned over the first side of the package structure;
a first die positioned over the interposer structure;
a second die positioned over the interposer structure and adjacent to the first die, wherein a width of the first die is equal to a width of the second die;
a plurality of top interconnectors positioned between the first die and the interposer structure and between the second die and the interposer structure, wherein the top interconnectors are in contact with a bottom side of the first die and a top side of the interposer structure and are in contact with a bottom side of the second die and the top side of the interposer structure; and
a plurality of middle interconnectors positioned between the first side of the package structure and the interposer structure to align with the first die and between the first side of the package structure and the interposer structure to align with the second die, wherein the middle interconnectors are in contact between a bottom side of the interposer structure and the first side of the package structure, such that the interposer structure is sandwiched between the top interconnectors and the middle interconnectors;
wherein the plurality of middle interconnectors topographically aligned with the first die comprise a first density;
wherein the plurality of middle interconnectors topographically aligned with the second die comprise a second density different from the first density;
wherein a number of the top interconnectors aligned with the first die matches with a number of the middle interconnectors aligned with the first die;
wherein a number of the top interconnectors aligned with the second die matches with a number of the middle interconnectors aligned with the second die.