CPC H01L 23/49822 (2013.01) [H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 2221/68345 (2013.01)] | 17 Claims |
1. A redistribution layer structure, comprising:
a first metal layer;
a first dielectric layer, disposed on the first metal layer;
a second metal layer, disposed on the first dielectric layer;
a second dielectric layer, disposed on the second metal layer;
a third metal layer, disposed on the second dielectric layer;
a third dielectric layer, disposed on the third metal layer;
a fourth metal layer, disposed on the third dielectric layer; and
a fourth dielectric layer, disposed on the fourth metal layer,
wherein a range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer,
wherein a Young's modulus of the third dielectric layer is less than a Young's modulus of the first dielectric layer.
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