CPC H01L 22/26 (2013.01) [H01L 21/31111 (2013.01)] | 10 Claims |
1. A substrate processing method comprising:
heating a processing liquid including a chemical liquid and water to a predetermined first temperature higher than a boiling point of the water;
heating a substrate to a predetermined second temperature higher than the boiling point of the water;
supplying the processing liquid heated to the predetermined first temperature on the substrate heated to the predetermined second temperature in order to etch a material on the substrate so that a liquid layer maintained by surface tension is formed on the substrate;
etching the material from the substrate using a chemical reaction between the material and the processing liquid;
measuring a size distribution of by-product particles on a surface of the substrate formed by the chemical reaction between the material and the processing liquid; and
controlling a supply of the processing liquid based on the size distribution of the by-product particles,
wherein the controlling the supply of the processing liquid includes:
calculating an average size of the by-product particles from the size distribution of the by-product particles on the surface of the substrate;
cooling the substrate to a temperature lower than the boiling point of the water when the average size of the by-product particles is greater than a predetermined first size and smaller than a predetermined second size; and
replenishing the water on the substrate cooled to the temperature lower than the boiling point of the water.
|