US 12,148,666 B2
Semiconductor device, method of manufacturing semiconductor device, and method of recycling substrate
Hidekazu Hayashi, Yokkaichi (JP); and Mie Matsuo, Yokkaichi (JP)
Assigned to Kioxia Corporation, Minato-ku (JP)
Filed by Kioxia Corporation, Minato-ku (JP)
Filed on Apr. 6, 2023, as Appl. No. 18/131,486.
Application 18/131,486 is a division of application No. 17/197,232, filed on Mar. 10, 2021, granted, now 11,652,000.
Claims priority of application No. 2020-138800 (JP), filed on Aug. 19, 2020.
Prior Publication US 2023/0245927 A1, Aug. 3, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01); H01L 21/78 (2006.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01)
CPC H01L 21/7813 (2013.01) [H01L 21/02694 (2013.01); H01L 21/187 (2013.01); H10B 41/27 (2023.02); H10B 41/40 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first substrate;
a first semiconductor layer provided below the first substrate, and including impurity atoms with a first density;
a second semiconductor layer provided below the first semiconductor layer, including impurity atoms with a second density that is higher than the first density, and being a porous layer;
a first film provided below the second semiconductor layer, and including a memory cell array as a first device;
a second film provided below the first film, and including a second device; and
a second substrate provided below the second film.