US 12,148,659 B2
Contact conductive feature formation and structure
Ken-Yu Chang, Hsinchu (TW); Chun-I Tsai, Hsinchu (TW); Ming-Hsing Tsai, Chu-Pei (TW); and Wei-Jung Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/308,743.
Application 18/308,743 is a continuation of application No. 17/372,671, filed on Jul. 12, 2021, granted, now 11,676,859.
Application 17/372,671 is a continuation of application No. 16/806,931, filed on Mar. 2, 2020, granted, now 11,062,941, issued on Jul. 13, 2021.
Application 16/806,931 is a continuation of application No. 16/032,416, filed on Jul. 11, 2018, granted, now 10,580,693, issued on Mar. 3, 2020.
Prior Publication US 2023/0268228 A1, Aug. 24, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/76846 (2013.01) [H01L 21/67075 (2013.01); H01L 21/76877 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 29/66545 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming one or more first dielectric layers over a conductive feature;
forming an opening through the one or more first dielectric layers, the opening exposing the conductive feature;
forming a second dielectric layer along sidewalls of the opening, wherein an upper surface of the second dielectric layer is lower than an upper surface of the one or more first dielectric layers;
forming a first layer on the second dielectric layer, wherein the first layer is a metal oxide or a metal nitride layer, wherein an upper surface of the first layer is lower than the upper surface of the second dielectric layer; and
forming a metal conductive filling material over the first layer, wherein the first layer extends between the metal conductive filling material and the conductive feature.