US 12,148,656 B2
Method of manufacturing semiconductor device and semiconductor devices
Hsiao-Min Chen, Hsinchu (TW); Jyh-Nan Lin, Hsinchu (TW); Kai-Shiung Hsu, Hsinchu (TW); and Ding-I Liu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 2, 2022, as Appl. No. 17/735,090.
Application 17/735,090 is a division of application No. 16/664,317, filed on Oct. 25, 2019, granted, now 11,322,397, issued on May 3, 2022.
Claims priority of provisional application 62/753,039, filed on Oct. 30, 2018.
Prior Publication US 2022/0262677 A1, Aug. 18, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/76832 (2013.01) [H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/0234 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first dielectric layer disposed over a semiconductor device structure;
an adhesion enhancement layer disposed over the first dielectric layer and in contact with a surface of the first dielectric layer; and
a second dielectric layer disposed over the adhesion enhancement layer,
wherein the first dielectric layer and the second dielectric layer comprise different metals.