US 12,148,621 B2
Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
Koei Kuribayashi, Toyama (JP); Arito Ogawa, Toyama (JP); and Atsuro Seino, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Mar. 31, 2023, as Appl. No. 18/194,026.
Application 18/194,026 is a continuation of application No. 17/159,252, filed on Jan. 27, 2021, granted, now 11,621,169.
Claims priority of application No. 2020-013676 (JP), filed on Jan. 30, 2020.
Prior Publication US 2023/0238244 A1, Jul. 27, 2023
Int. Cl. H01L 21/285 (2006.01); C23C 16/14 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/28556 (2013.01) [C23C 16/14 (2013.01); C23C 16/45523 (2013.01); H01L 21/28568 (2013.01); H01L 21/32051 (2013.01); H01L 21/67207 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
forming a molybdenum-containing film on the substrate by performing:
(a) supplying a molybdenum-containing gas to the substrate;
(b) supplying a first reducing gas to the substrate; and
(c) supplying a second reducing gas, which is different from the first reducing gas, to the substrate,
wherein (a), (b), and (c) are performed while a supply flow rate of the first reducing gas is larger than a supply flow rate of the molybdenum-containing gas and is smaller than a supply flow rate of the second reducing gas.