US 12,148,619 B2
Manufacturing method for semiconductor structure, and semiconductor structure
Mengmeng Yang, Hefei (CN); and Jie Bai, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Oct. 20, 2021, as Appl. No. 17/505,678.
Application 17/505,678 is a continuation of application No. PCT/CN2021/103732, filed on Jun. 30, 2021.
Claims priority of application No. 202110032629.4 (CN), filed on Jan. 11, 2021.
Prior Publication US 2022/0223420 A1, Jul. 14, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/225 (2006.01); H01L 27/088 (2006.01)
CPC H01L 21/2255 (2013.01) [H01L 27/088 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A manufacturing method for a semiconductor structure, comprising:
providing a substrate, the substrate comprising a first region and a second region disposed outside the first region;
forming a dielectric layer on the substrate;
forming a first diffusion film layer on the dielectric layer, which comprises sequentially forming a barrier layer, a first metal oxide layer and a first sealing layer on the dielectric layer;
removing the first diffusion film layer corresponding to the second region;
forming a second diffusion film layer on the first diffusion film layer corresponding to the first region and the dielectric layer corresponding to the second region, which comprises sequentially forming a second metal oxide layer and a second sealing layer on the first diffusion film layer corresponding to the first region and directly on the dielectric layer corresponding to the second region;
removing the second diffusion film layer corresponding to the first region by etching; and
performing an annealing treatment to diffuse a first metal element in the first metal oxide layer into the dielectric layer corresponding to the first region and diffuse a second metal element in the second metal oxide layer into the dielectric layer corresponding to the second region;
wherein the first metal oxide layer is made of lanthanum oxide, the second metal oxide layer is made of aluminum oxide, the barrier layer as well as the first sealing layer and the second sealing layer are made of titanium nitride.