US 12,148,614 B2
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Takuya Joda, Toyama (JP); Arito Ogawa, Toyama (JP); Norikazu Mizuno, Toyama (JP); Shogo Hayasaka, Toyama (JP); and Koei Kuribayashi, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 17, 2021, as Appl. No. 17/478,523.
Claims priority of application No. 2020-158209 (JP), filed on Sep. 23, 2020.
Prior Publication US 2022/0093392 A1, Mar. 24, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01)
CPC H01L 21/0262 (2013.01) [C23C 16/45561 (2013.01); C23C 16/45563 (2013.01); C23C 16/4584 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising
(a) forming a first layer containing silicon on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle comprises:
(a1) supplying a first element-containing gas containing a first element other than silicon to the substrate; and
(a2) supplying a first reducing gas to the substrate a plurality of times;
(a′) supplying a first silicon-containing gas to the substrate,
wherein (a1) and (a2) are sequentially performed in the first layer forming cycle; and
(b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle comprises:
(b1) supplying a second element-containing gas to the substrate; and
(b2) supplying a second reducing gas to the substrate,
wherein (b1) and (b2) are sequentially performed in the second layer forming cycle.