US 12,148,613 B2
Semiconductor structures and manufacturing methods thereof
Kai Cheng, Jiangsu (CN); and Liyang Zhang, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/779,474
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Apr. 15, 2021, PCT No. PCT/CN2021/087493
§ 371(c)(1), (2) Date May 24, 2022,
PCT Pub. No. WO2022/217542, PCT Pub. Date Oct. 20, 2022.
Prior Publication US 2023/0343589 A1, Oct. 26, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01)
CPC H01L 21/0254 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01)] 19 Claims
OG exemplary drawing
 
8. A semiconductor structure, comprising:
a first group III nitride epitaxial layer disposed on a support substrate and a silicon substrate;
a bonding layer between the first group III nitride epitaxial layer and the silicon substrate, wherein a material of the bonding layer comprises silicon dioxide or silicon nitride, and the first group III nitride epitaxial layer is bonded to the silicon substrate by the bonding layer;
through-silicon-vias formed in the silicon substrate;
first through-holes formed in the bonding layer, wherein the through-silicon-vias communicate with the first through-holes; and
a second group III nitride epitaxial layer within the first through-holes and the through-silicon-vias and on the silicon substrate, wherein the second group III nitride epitaxial layer is coupled to the first group III nitride epitaxial layer.