US 12,148,612 B2
Non-polar III-nitride binary and ternary materials, method for obtaining thereof and uses
Mengyao Xie, Madrid (ES); Amalia Luisa Fernando Saavedra, Madrid (ES); Ana María Bengoechea Encabo, Madrid (ES); Steven Albert, Madrid (ES); Enrique Calleja Pardo, Madrid (ES); Miguel Angel Sánchez García, Madrid (ES); and David López-Romero Moraleda, Madrid (ES)
Assigned to Fengjie Xie, Shanghai (CN); and Mengyao Xie, Madrid (ES)
Filed by Fengjie Xie, Shanghai (CN); and Mengyao Xie, Madrid (ES)
Filed on Apr. 25, 2022, as Appl. No. 17/728,902.
Application 17/728,902 is a continuation of application No. PCT/EP2020/079359, filed on Oct. 19, 2020.
Prior Publication US 2022/0254625 A1, Aug. 11, 2022
Int. Cl. H01L 21/02 (2006.01); C30B 29/40 (2006.01); H01L 33/00 (2010.01); H01S 5/32 (2006.01); H01S 5/02 (2006.01)
CPC H01L 21/0254 (2013.01) [C30B 29/406 (2013.01); H01L 21/02609 (2013.01); H01L 33/0075 (2013.01); H01S 5/32025 (2019.08); H01S 5/0206 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for obtaining a non-polar III-Nitride material, comprising:
etching a non-polar III-Nitride template to form a plurality of nano-pillars, wherein the non-polar III-Nitride template is an m-plane or a-plane oriented single crystal having a formula of XxZ1-xN, where X and Z are independently selected from the group consisting of Ga, In and Al, and 0≤x≤1, the plurality of nano-pillars are arranged along two different directions to form an ordered array of nano-pillars, the two different directions include a c-direction and an orthogonal direction with respect to the c-direction, wherein a cross-section of the nano-pillars is a circle, a cross-sectional size ranging from 20 nm to 2000 nm, and a pitch between centers of two nano-pillars ranging from 50 nm to 2000 nm, and the nano-pillars have a height ranging from 100 nm to 1000 nm;
growing a first III-Nitride on the ordered array of nano-pillars to make the ordered array of nano-pillars to grow into an ordered array of nano-crystals, wherein a material of the first III-Nitride is the same as a material of the ordered array of nano-pillars; and
growing a second III-Nitride on the ordered array of nano-crystals to form a coalesced non-polar III-Nitride layer, wherein a material of the second III-Nitride is different from the material of the first III-Nitride.