US 12,148,609 B2
Silicon oxide deposition method
Varun Sharma, Helsinki (FI); Daniele Chiappe, Espoo (FI); Eva Tois, Espoo (FI); Viraj Madhiwala, Helsinki (FI); Marko Tuominen, Helsinki (FI); Charles Dezelah, Helsinki (FI); Michael Givens, Oud-Heverlee (BE); and Tom Blomberg, Vantaa (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Sep. 13, 2021, as Appl. No. 17/472,981.
Claims priority of provisional application 63/079,239, filed on Sep. 16, 2020.
Prior Publication US 2022/0084817 A1, Mar. 17, 2022
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02164 (2013.01) [H01L 21/02274 (2013.01); H01L 21/0228 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method for depositing silicon oxide on a substrate, the method comprising:
providing a substrate, having patterned features thereon, in a reaction chamber;
providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom and;
providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate to conformally deposit the silicon oxide on the patterned features.